Datasheet Details
| Part number | SST6301K |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 411.95 KB |
| Description | N-Channel Enhancement Mode Power MosFET |
| Datasheet |
 SST6301K Datasheet
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General Description
0.37Ref.
0.20 0.60 Ref.
The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.
Key Features
- RoHS Compliant.
- Simple Drive Requirement.
- Small Package Outline G1 D1 D2 G2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 301E S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM P.