Datasheet4U Logo Datasheet4U.com

SST6301K Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0£[ N-Channel Enhancement Mode Power Mos.

General Description

0.37Ref.

0.20 0.60 Ref.

2.60 3.00 The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Key Features

  • RoHS Compliant.
  • Simple Drive Requirement.
  • Small Package Outline G1 D1 D2 G2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 301E S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM P.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number Description
SST6601 N And P-Channel Enhancement Mode Power MOSFET
SST6601-C N And P-Channel Enhancement Mode Power MOSFET
SST1N20-C N-Ch Enhancement Mode Power MOSFET
SST2007-C P-Channel Enhancement Mode Power MOSFET
SST2019L-C Dual N-Ch Enhancement Mode Power MOSFET
SST2602 N-Channel Enhancement Mode Power MosFET
SST2603 P-Channel MOSFET
SST2604 N-Channel Enhancement Mode Power MosFET
SST2605 P-Channel MOSFET
SST2610 N-Channel Enhancement Mode Power MosFET

SST6301K Distributor