Seme LAB 2N3637
PNP SILICON TRANSISTOR
| Part No. | 2N3637 |
|---|---|
| Datasheet | 2N3637 Download |
| Manufacturer |  Seme LAB |
| Description | PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) PNP SILICON TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )FEATURES
● High Voltage Switching 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 1 2 .7 0 (0 .5 0 0 ) m in .● Low Power Amplifier
APPLICATIONS
● Hermetic TO39 Package 5 .0 8 (0 .2 0 0 ) ty p . 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 2 .5 4 (0 .1 0 0 )APPLICATIONS
:● General Purpose
● High Speed Saturated Switching 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 175V 175V 5V 1A 1W 5.71mW/ °C 5W 28.6mW / °C –65 to +200°C Semelab plc.