2N6798
Overview
- V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
- ID = 5.5A
- RDSON = 0.40W 4 5 °
| Part | 2N6798 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| Category | Transistor |
| Manufacturer | Seme LAB |
| Size | 21.20 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6798 | Microsemi | N-CHANNEL MOSFET |
| 2N6796 | Intersil | N-Channel Power MOSFET |
| 2N6790 | Fairchild Semiconductor | N-CHANNEL Power MOSFET |
| 2N6796 | TT Electronics | N-CHANNEL POWER MOSFET |
| 2N6792 | Qunli | Power MOSFET |