Seme LAB 2N6798
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
| Part No. | 2N6798 |
|---|---|
| Datasheet | 2N6798 Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .FEATURES
5 .0 8 (0 .2 0 0 ) ty p .● V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
● ID = 5.5A
● RDSON = 0.40W 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDS VGS ID Drain–Source Voltage Gate–Source Voltage Drain Current Continuous TC = 25°C TC = 100°C Drain Current Pulsed IDM IA Avalanche Current PD Total Device Dissipation @ TC = 25°C TC = 100°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 secs.