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2N6798 - N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Datasheet Summary

Features

  • 5 .0 8 (0 .2 0 0 ) ty p.
  • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3.
  • ID = 5.5A.
  • RDSON = 0.40W 4 5 ° TO.
  • 39 METAL.

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Datasheet Details

Part number 2N6798
Manufacturer Seme LAB
File Size 21.20 KB
Description N-CHANNEL ENHANCEMENT MODE TRANSISTOR
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2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 5.5A • RDSON = 0.
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