2N6798 - N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Seme LAB

Key Features

5 .0 8 (0 .2 0 0 ) ty p.
V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3.
ID = 5.5A.
RDSON = 0.40W 4 5 ° TO.
39 METAL.

2N6798 n-channel enhancement mode transistor by Seme LAB - Datasheet Preview

Datasheet Details

Part number	2N6798
Manufacturer	Seme LAB
File Size	21.20 KB
Description	N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Datasheet	2N6798 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N6798	N-CHANNEL MOSFET	Microsemi
2N6790	N-CHANNEL Power MOSFET	Fairchild Semiconductor
2N6790	N-CHANNEL MOSFET	Microsemi
2N6790U	N-CHANNEL MOSFET	Microsemi
2N6792	Power MOSFET	Qunli

Other Datasheets by Seme LAB

Part Number	Description
2N6790	N-Channel MOSFET
2N6792	N-Channel MOSFET
2N6794	N-CHANNEL POWER MOSFET
2N6796	TMOS FET TRANSISTOR
2N6796LCC4	N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6798 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • V(BR)DSS = 200V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 5.5A • RDSON = 0.