BUL47A Datasheet Advanced Distributed Base Design High Voltage High Speed NPN Silicon Power Transistor

Manufacturer: Seme LAB

Overview: BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • • • • • • • www.DataSheet4U.com SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max.

Datasheet Details

Part number	BUL47A
Manufacturer	Seme LAB
File Size	46.77 KB
Description	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Datasheet	BUL47A_SemeLAB.pdf

Key Features

Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. TO3 (TO-204AA) Pin 1.
Base Pin 2.
Emitter Case is Collector.

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