Seme LAB BUL47A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
| Part No. | BUL47A |
|---|---|
| Datasheet | BUL47A Download |
| Manufacturer |  Seme LAB |
| Description | ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)●
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● SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max.
FEATURES
● Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.● Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
● Triple Guard Rings for improved control of high voltages. TO3 (TO-204AA) Pin 1 – Base Pin 2 – Emitter Case is Collector ABSOLUTE MAX...
