BUL47A Overview
BUL47A Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84.
BUL47A Key Features
- Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ra
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple Guard Rings for improved control of high voltages
- Base Pin 2
- Emitter Case is Collector