BUL53B Datasheet NPN Transistor

Manufacturer: Seme LAB

Overview: LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL53B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.

Datasheet Details

Part number	BUL53B
Manufacturer	Seme LAB
File Size	19.59 KB
Description	NPN Transistor
Datasheet	BUL53B_SemeLAB.pdf

Key Features

2.54 2.54 TO220 Pin 1.
Base Pin 2.
Collector Pin 3.
Emitter.
Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.

BUL53B Distributor

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