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BUL53BSMD - NPN Transistor

Key Features

  • Multi-Base design for efficient energy distribution across the chip.
  • SIgnificantly improved switching and energy ratings across full temperature range.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple guard rings for improved control of high voltages. SMD1 Pad 1.
  • Base Pad 2.
  • Collector Pad 3.
  • Emitter.

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Datasheet Details

Part number BUL53BSMD
Manufacturer Seme LAB
File Size 20.58 KB
Description NPN Transistor
Datasheet download datasheet BUL53BSMD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 • CERAMIC SURFACE MOUNT PACKAGE • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE (VCBO = 800V) • FAST SWITCHING (tf = 100ns) • HIGH ENERGY RATING 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .