BUL53BSMD
BUL53BSMD is NPN Transistor manufactured by Seme LAB.
FEATURES
- Multi-Base design for efficient energy distribution across the chip.
- SIgnificantly improved switching and energy ratings across full temperature range.
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
- Triple guard rings for improved control of high voltages.
SMD1
Pad 1
- Base Pad 2
- Collector Pad 3
- Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector
- Base Voltage Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Power Dissipation Thermal Impedance (when mounted on thermally conducting PCB) Maximum Junction Temperature Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
500V 250V 10V 12A 20A 3A 60W 3.0°C/W 200°C
- 55 to +200°C
Prelim. 7/00
Semelab plc.
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)- V(BR)CBO- V(BR)EBO- ICEO- ICBO- IEBO- Collector
- Emitter sustaining voltage Collector
- Base breakdown voltage Emitter
- Base breakdown voltage Collector cut-off current Collector
- Base cut-off current Emitter cut-off current Collector
- Emitter saturation voltage Base
- Emitter saturation voltage Base
- Emitter saturation voltage DC Current gain IC = 0 IC = 100m A IC = 2A IC = 5A IC = 2A IC = 5A IC = 1A IC = 100m A h FE- IC = 2A IC = 5A
Test Conditions
IC = 100m A IC = 1m A IB = 1m A IB = 0 IE = 0 IC = 0 VCE = 250V VCB = 500V TC = 125°C VEB = 5V TC = 125°C IB = 10m A IB = 200m A IB = 500m A IB = 200m A IB = 500m A VCE = 4V VCE = 4V VCE = 4V VCE = 4V
Min.
250 500 10
Typ.
Max.
Unit
100 10 100 10 100 0.05 0.15 0.3 0.8 0.9 0.8 20 20 20 45 40 0.1 0.3 0.6 1.1 1.2 1.0 m
A A A m...
