BUL53BSMD Description
BUL53BSMD Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x . 0 .8 9 (0 .0 3 5 ) m.
BUL53BSMD Key Features
- Multi-Base design for efficient energy distribution across the chip
- SIgnificantly improved switching and energy ratings across full temperature range
- Ion implant and high accuracy masking for tight control of characteristics from batch to batch
- Triple guard rings for improved control of high voltages
- Base Pad 2
- Collector Pad 3
- Emitter
BUL53BSMD Applications
- SEMEFAB DESIGNED AND DIFFUSED DIE