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LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL55A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3 14.0
0.85
• • • •
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING
FEATURES
2.54 2.54
TO220
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages.
BUL55A Datasheet
