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BUL66B - NPN Transistor

Datasheet Summary

Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3.
  • Emitter 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK(TO251) Pin 1.
  • Base Pin 2.
  • Collector.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages.

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Datasheet preview – BUL66B

Datasheet Details

Part number BUL66B
Manufacturer Seme LAB
File Size 19.90 KB
Description NPN Transistor
Datasheet download datasheet BUL66B Datasheet
Additional preview pages of the BUL66B datasheet.

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Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL66B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3 – Emitter 4.60 (0.181) Typ. 1.
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