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BUL66B Datasheet NPN Transistor

Manufacturer: Seme LAB

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Datasheet Details

Part number BUL66B
Manufacturer Seme LAB
File Size 19.90 KB
Description NPN Transistor
Download BUL66B Download (PDF)

Overview

LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL66B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) 2.31 (0.091) Typ.

2.31 (0.091) Typ.

0.46 (0.018) 0.61 (0.

Key Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3.
  • Emitter 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK(TO251) Pin 1.
  • Base Pin 2.
  • Collector.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages.

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