Seme LAB D1007UK
METAL GATE RF SILICON FET
| Part No. | D1007UK |
|---|---|
| Datasheet | D1007UK Download |
| Manufacturer |  Seme LAB |
| Description | METAL GATE RF SILICON FET |
| Buy | Stock & Price |
MECHANICAL DATA
B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol. Inches Tol. 0.13 0.254 0.005 0.13 0.065R 0.005 5° 45° 5° 0.76 0.650 0.03 0.13 0.255 0.005 0.13 0.725 0.005 0.13 0.060 0.005 0.25 0.190 0.010 0.13 0.975 0.005 0.13 0.060 0.005 0.13 0.032R 0.005 0.02 0.005 0.001 0.13 0.085 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULLFEATURES
● SIMPLIFIED AMPLIFIER DESIGN● SUITABLE FOR BROAD BAND
APPLICATIONS
● LOW Crss● USEFUL PO at 1 GHz
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 100W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS ID(sat) Gate – Source Breakdown Voltage * Drain Current * ±20V 5A Tstg Storage Temperatur...
