• Part: D1007UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 89.18 KB
Download D1007UK Datasheet PDF
Seme LAB
D1007UK
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - LOW Crss - USEFUL PO at 1 GHz - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 100W BVDSS Drain - Source Breakdown Voltage - 70V BVGSS ID(sat) Gate - Source Breakdown Voltage - Drain Current - ±20V 5A Tstg Storage Temperature Tj Maximum Operating Junction Temperature - 65 to 150°C 200°C - Per Side Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:...