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TetraFET
D1018UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B A C E (2 pls)
K
1
2
3
4
F
G
8
J Typ.
7
6
5
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
D M Q
P
I
N
O
H
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM
DD
PIN 1 PIN 3 PIN 5 PIN 7 SOURCE (COMMON) DRAIN 2 SOURCE (COMMON) GATE 1 DIM A B C D E F G H I J K M N O P Q mm 9.14 12.70 45° 6.86 0.76 9.78 19.05 4.19 3.17 1.52R 1.65R 16.51 22.86 0.13 6.35 10.77 PIN 2 PIN 4 PIN 6 PIN 8 DRAIN 1 SOURCE (COMMON) GATE 2 SOURCE (COMMON) Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.025 0.005
Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.