The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH06
• • • • • • 600V, 10A Full Bridge Rectifier Configuration High Temperature Operation Tj = 200°C Effective Zero Reverse and Forward Recovery High Speed Low Loss Switching High Frequency Operation High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Per Die, Tc = 25°C unless otherwise stated)
VRRM VRSM VDC IF(AVG) IFSM TJ Tstg Repetitive Peak Reverse Breakdown Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current Non Repetitive Peak Forward Surge Current, tp = 10µs Junction Temperature Range Storage Temperature Range 600V 600V 600V 10A 45A -55 to +200°C -55 to +225°C
THERMAL PROPERTIES (Per Die)
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Max.
2.
SML010FBDH06 Datasheet
