SML010FBDH06 datasheet by Seme LAB.
| Part number | SML010FBDH06 |
|---|---|
| Datasheet | SML010FBDH06_SemeLAB.pdf |
| File Size | 154.50 KB |
| Manufacturer | Seme LAB |
| Description | SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE |
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2.0 Units °C/W (Per Die, Tc = 25°C unless otherwise stated) Symbols VF IR (1) Parameters Forward Voltage Test Conditions IF = 10A Tc = 175°C VR = VRRM Tc = 175°C Min. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
| Part Number | Description |
|---|---|
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001R3AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100A9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B13 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100C4 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100H9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100J19 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
