SML901R1AN Overview
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
SML901R1AN datasheet by Seme LAB.
| Part number | SML901R1AN |
|---|---|
| Datasheet | SML901R1AN_SemeLAB.pdf |
| File Size | 60.94 KB |
| Manufacturer | Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
|
|
|
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
| Part Number | Description |
|---|---|
| SML901R3AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML901RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML9030-220M | P-CHANNEL MOS TRANSISTOR |
| SML9030-T254 | P-CHANNEL MOS TRANSISTOR |
| SML010FBDH06 | SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE |
| SML1001R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001R3AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100A9 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML100B11 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |