SML901RHN
SML901RHN is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
SML1001RHN SML901RHN0
TO- 258 Package Outline.
Dimensions in mm (Inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035)
4TH GENERATION MOSFET
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
17.96 (0.707) 17.70 (0.697)
13.84 (0.545) 13.58 (0.535)
1 2 3
4.19 (0.165) 3.94 (0.155) Dia.
19.05 (0.750) 12.70 (0.500)
5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ.
21.21 (0.835) 20.70 (0.815) 3.56 (0.140) BSC
Pin 1
- Drain
Pin 2
- Source
Pin 3
- Gate
MAXIMUM RATINGS (Tcase =25°C unless otherwise stated)
Parameter Drain
- Source Voltage Continuous Drain Current Pulsed Drain Current
VDSS ID IDM VGS PD TJ , TSTJ TL
SML 901RHN 1001RHN 900 1000 10 40 ±30 250 2
- 55 to +150°C 300
Unit V A A V W W/°C °C
Gate
- Source Voltage Total Power Dissipation @ Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Lead Tempeature (0.063” from Case for 10 Sec.)
STATIC ELECTRICAL RATINGS (Tcase =25°C unless otherwise stated)
Characteristic / Test Conditions / Part Number VGS = 0V BVDSS Drain
- Source Breakdown Voltage ID = 250m A IDSS IGSS ID(ON) Zero Gate Voltage Drain Current (VGS = 0V) Gate
- Source Leakage Current On State Drain Current 2 VDS = VDSS VDS = 0.8VDSS VGS = ±30V VGS = 10V VDS = VGS ID = 1.0m A VGS = 10V , ID = 0.5 ID [Cont.] TC = 125°C VDS = 0V 10 2 4 1.00 SML1001RHN SML901RHN Min. 1000 900 250 1000 ±100 Typ. Max. Unit V m A n A A V
VDS > ID(ON) x RDS(ON) Max
VGS(TH) Gate Threshold Voltage RDS(ON) Static Drain
- Source On State Resistance 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle <...
