SML901R3AN Description
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
SML901R3AN is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
| Part Number | Description |
|---|---|
| SML901R1AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML901RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML9030-220M | P-CHANNEL MOS TRANSISTOR |
| SML9030-T254 | P-CHANNEL MOS TRANSISTOR |
| SML010FBDH06 | SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE |
1000 900 250 1000 ±100 Typ. Unit V BVDSS IDSS IGSS ID(ON) mA nA A V VGS(TH) Gate Threshold Voltage RDS(ON) W 1) Repetitive Rating: Pulse Width limited by maximum junction temperature.