N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SMLA42CSM
MECHANICAL DATA Dimensions in mm (inches)
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
0.51 ± 0.10 (0.02 ± 0.004)
0.31 rad. (0.012)
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
0.76 ± 0.15 (0.03 ± 0.006)
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.31 rad. (0.012)
A 1.40 (0.055) max.
FEATURES
• HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGES • LOW CAPACITANCE • HERMETIC CERAMIC SURFACE MOUNT PACKAGE SOT23CSM (SOT23 COMPATIBLE)
1.02 ± 0.10 (0.04 ± 0.004)
SOT23 CERAMIC (LCC1 PACKAGE)
Underside View PAD 1 – Base PAD 2 – Collector PAD 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD Tj Tstg Semelab plc.