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HCP70R360S - 700V N-Channel Super Junction MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 23 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2015 BVDSS = 700 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.

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Datasheet Details

Part number HCP70R360S
Manufacturer SemiHow
File Size 175.64 KB
Description 700V N-Channel Super Junction MOSFET
Datasheet download datasheet HCP70R360S Datasheet

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HCP70R360S HCP70R360S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 23 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2015 BVDSS = 700 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3.