SemiHow HCP20NT60V
N-Channel MOSFET
| Part No. | HCP20NT60V |
|---|---|
| Datasheet | HCP20NT60V Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ 7\S #9GS=10V 100% Avalanche Tested RoHS Compliant TO-220 1 23 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 20 12.5 60 ρ30 500 10 1 4.5 PD Power Dissipation (TC = 25
