HCP20NT60V - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7S#9GS=10V 100% Avalanche Tested RoHS Compliant TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage.

HCP20NT60V n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCP20NT60V
Manufacturer	SemiHow
File Size	387.95 KB
Description	N-Channel MOSFET
Datasheet	HCP20NT60V Datasheet

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HCP20NT60V Apr 2014 HCP20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7S#9GS=10V 100% Avalanche Tested RoHS Compliant TO-220 1 23 1.Gate 2. Drain 3.