HCP60R115 - 600V N-Channel Super Junction MOSFET

SemiHow

Key Features

Very Low FOM (RDS(on) X Qg).
Extremely low switching loss.
Excellent stability and uniformity.
100% Avalanche Tested.
Built-in ESD Diode.

HCP60R115 600v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCP60R115
Manufacturer	SemiHow
File Size	222.22 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCP60R115 Datasheet

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HCP60R115 Dec 2019 HCP60R115 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 26.