SemiHow HCP65R600S
650V N-Channel Super Junction MOSFET
| Part No. | HCP65R600S |
|---|---|
| Datasheet | HCP65R600S Download |
| Manufacturer |  SemiHow |
| Description | 650V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 7.3 A TO-220 1 23 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 650 7.3 4.6 22 ρ20 ρ30 EAS IAR EAR dv/dt Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) 150 2.0 0.5 15 PD Power Dissipation (TC = 25) - Derate above 25 100 0.8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purp...
