HCP65R600S - 650V N-Channel Super Junction MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 7.3 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

HCP65R600S 650v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCP65R600S
Manufacturer	SemiHow
File Size	171.63 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCP65R600S Datasheet

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HCP65R600S HCP65R600S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ ȍ ID = 7.3 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 650 7.3 4.