HCP65R360S - 650V N-Channel Super Junction MOSFET

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SemiHow

Part number	HCP65R360S
Manufacturer	SemiHow
File Size	175.02 KB
Description	650V N-Channel Super Junction MOSFET
Datasheet	HCP65R360S Datasheet
Additional preview pages of the HCP65R360S datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Published: Apr 8, 2016 |