HFA9N90 Datasheet 900v N-channel MOSFET

Manufacturer: SemiHow

Overview: HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET.

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested RDS(on) typ ȍ ID = 9.0 A TO-247 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drai.