HFA9N90
HFA9N90 is manufactured by SemiHow.
July 2013
BVDSS = 900 V
900V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
RDS(on) typ ȍ ID = 9.0 A
TO-247
1.Gate 2. Drain 3....
