SemiHow HFA9N90
900V N-Channel MOSFET
| Part No. | HFA9N90 |
|---|---|
| Datasheet | HFA9N90 Download |
| Manufacturer |  SemiHow |
| Description | 900V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested RDS(on) typ ȍ ID = 9.0 A TO-247 1 2 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TC=25 unless otherwise specified Parameter Value 900 Units V A A A V mJ A mJ V/ns W W/ఁ͑ ఁ͑ ఁ͑ – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) 9.0* 5.7* 36* ρͤ͑͡ (Note 2) (Note 1) (Note 1) (Note 3) 900 9.0 28 4.0 110 0.88 -55 to +150 300 Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperat...
