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HFI9N50 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW9N50 HFI9N50 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Datasheet Details

Part number HFI9N50
Manufacturer SemiHow
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet HFI9N50 Datasheet

Full PDF Text Transcription for HFI9N50 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFI9N50. For precise diagrams, and layout, please refer to the original PDF.

HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rug...

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ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.58 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW9N50 HFI9N50 1.Gate 2. Drain 3.

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