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HFP35N75 Datasheet PDF

SemiHow HFP35N75

75V N-Channel MOSFET

Part No. HFP35N75
Datasheet HFP35N75 Download
Manufacturer
SemiHow
Description 75V N-Channel MOSFET
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HFP35N75 datasheet page 1 preview

FEATURES

● Originative New Design
● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 40 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V
● 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source

ABSOLUTE MAXIMUM RATINGS

TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 75 35 25 140 ±30 580 35 12 5.5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 120 0.8 -55 to +175 300 Units V...
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