Datasheet Summary
Dec 2008
75V N-Channel MOSFET
BVDSS = 75 V RDS(on) typ= 24mΩ ID = 35 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.024 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....