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HFP4N50 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFP4N50
Manufacturer SemiHow
File Size 675.91 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP4N50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFP4N50 July 2005 HFP4N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 2.0 Ω ID = 3.4 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.