Datasheet Summary
July 2015
600V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ7S#9GS=10V 100% Avalanche Tested
BVDSS = 600 V RDS(on) typ ȍ ID = 4 A
TO-220
1 2 3
1.Gate 2. Drain 3....