SemiHow HFP4N60F
600V N-Channel MOSFET
| Part No. | HFP4N60F |
|---|---|
| Datasheet | HFP4N60F Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ 7\S #9GS=10V 100% Avalanche Tested BVDSS = 600 V RDS(on) typ ȍ ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25) - Derate above 25 600 4.0 2.5 16 ρ30 70 4 11 110 0.88 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W/ Thermal Resistance Characteristics Symbol RșJC RșCS RșJA Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max.
