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HFP5N40
June 2005
HFP5N40
400V N-Channel MOSFET
BVDSS = 400 V RDS(on) typ ȍ ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3.