The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HFP5N50S
OCT 2008
HFP5N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220
1 23
1.Gate 2. Drain 3.