HFP6N65U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested July 2012 BVDSS = 650 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.

HFP6N65U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP6N65U
Manufacturer	SemiHow
File Size	202.32 KB
Description	N-Channel MOSFET
Datasheet	HFP6N65U Datasheet

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HFP6N65U HFP6N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested July 2012 BVDSS = 650 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3.