HFP6N90
HFP6N90 is N-Channel MOSFET manufactured by SemiHow.
Dec 2005
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....
