HFP6N70U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS.

HFP6N70U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP6N70U
Manufacturer	SemiHow
File Size	198.73 KB
Description	N-Channel MOSFET
Datasheet	HFP6N70U Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP60N06	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP630	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan
HFP640	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan
HFP13N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number	Description
HFP6N60U	N-Channel MOSFET
HFP6N65U	N-Channel MOSFET
HFP6N90	N-Channel MOSFET
HFP630	200V N-Channel MOSFET
HFP630A	200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP6N70U HFP6N70U 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3.