SemiHow HFS730F
N-Channel MOSFET
FEATURES
Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant HFP730F TO-220KEY PARAMETERS
Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 400 6 0.8 13 HFS730F TO-220F Symbol Unit V A ȍ nC S D G S D GABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 6.0 6.0 * 3.6 3.6 * 24 24 * ρ30 250 6.0 7.6 4.5 PD Power Dissipation (TC = 25) - Derate above 25 76 0.61 29 0.23 TJ, TSTG TL Operating and Storage Temperature Range Maxim