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HFS730 - 400V N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFS730
Manufacturer SemiHow
File Size 881.66 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet HFS730 Datasheet

Full PDF Text Transcription for HFS730 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFS730. For precise diagrams, and layout, please refer to the original PDF.

HFS730 Dec 2005 HFS730 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.8 Ω ID = 5.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robus...

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Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.

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