HFS730 Datasheet | SemiHow

Dec 2005 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 0.8 Ω ID = 5.5 A Features  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.8 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3....