Full PDF Text Transcription for HFS730U (Reference)
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HFS730U HFS730U 400V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacit...
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Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.75 ȍ 7S #9GS=10V 100% Avalanche Tested Oct 2013 BVDSS = 400 V RDS(on) typ = 0.75 ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.