Full PDF Text Transcription for HFS730S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFS730S. For precise diagrams, and layout, please refer to the original PDF.
HFS730S HFS730S 400V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacit...
View more extracted text
Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.75 ȍ 7S #9GS=10V 100% Avalanche Tested May 2015 BVDSS = 400 V RDS(on) typ = 0.75 ȍ ID = 6.0 A TO-220F 12 3 1.Gate 2. Drain 3.
HFS730S Datasheet
