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HRLO120N10H - N-Channel Trench MOSFET

Features

  •  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capability  Enhanced Avalanche Ruggedness  100% UIS Tested, 100% Rg Tested  Lead free, Halogen Free.

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Datasheet Details

Part number HRLO120N10H
Manufacturer SemiHow
File Size 468.36 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRLO120N10H Datasheet
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Full PDF Text Transcription

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HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capability  Enhanced Avalanche Ruggedness  100% UIS Tested, 100% Rg Tested  Lead free, Halogen Free Application  Synchronous Rectification in SMPS  Hard Switching and High Speed Circuit  DC/DC in Telecoms and Inductrial Key Parameters Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 100 12 9.5 11.5 Unit V A mΩ mΩ Package & Internal Circuit SOP-8 Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25℃ TA = 100℃ Single Pulsed Avalanche Energy L=0.
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