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HRLO125N06K
Jan 2016
HRLO125N06K
60V N-Channel Trench MOSFET
Features
High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology
Application
Power Management in Inverter System Synchronous Rectification
Key Parameters
Parameter BVDSS ID
RDS(on), typ @10V RDS(on), typ @4.5V
Value 60 10 12.5 14.0
Unit V A Pȍ Pȍ
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TA = 25 TA = 70
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TA = 25 TA = 70
Operating and Storage Temperature Range
60 ρ20 10
8 40 123 3.1 2.
HRLO125N06K Datasheet
