SemiHow HRLO125N06K
N-Channel Trench MOSFET
| Part No. | HRLO125N06K |
|---|---|
| Datasheet | HRLO125N06K Download |
| Manufacturer |  SemiHow |
| Description | N-Channel Trench MOSFET |
| Buy | Stock & Price |
FEATURES
High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology Application Power Management in Inverter System Synchronous RectificationKEY PARAMETERS
Parameter BVDSS ID RDS(on), typ @10V RDS(on), typ @4.5V Value 60 10 12.5 14.0 Unit V A Pȍ Pȍ Package & Internal Circuit SOP-8ABSOLUTE MAXIMUM RATINGS
TA=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25 TA = 70 (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TA = 25 TA = 70 Operating and Storage Temperature Range 60 ρ20 10 8 40 123 3.1 2.0 -55 to +150 Units V V A A A mJ W W Thermal Resistance Characteristics Symbol Parameter RșJL Junction-to-Lead Junction-to-Ambient (t10s) RșJA Junction-to-Ambient (steady state) Typ. ---- Max. 24 40 75 Units /W /W /W క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΒΟ͑ͣͧ͑͢͡ HRLO125N06KELECTRICAL CHARACTERISTICS
TJ=25 qC unless otherwise specified Symbo...
