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HRLO180N10K
Jan 2016
HRLO180N10K
100V N-Channel Trench MOSFET
Features
High Dense Cell Design Reliable and Rugged Advanced Trench Process Technology
Key Parameters
Parameter BVDSS ID
RDS(on), typ @10V RDS(on), typ @4.5V
Value 100 9.3 16 17
Unit V A Pȍ Pȍ
Application
Power Management in Inverter System Synchronous Rectification
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TA=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS ID IDM EAS PD TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TA = 25 TA = 70
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation
TA = 25 TA = 70
Operating and Storage Temperature Range
100 ρ20 9.3 7.4 37 110 3.1 2.
HRLO180N10K Datasheet
