Datasheet Details
| Part number | SPM6G060-120D |
|---|---|
| Manufacturer | Sensitron |
| File Size | 92.00 KB |
| Description | Three-Phase IGBT BRIDGE |
| Datasheet | SPM6G060-120D_Sensitron.pdf |
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Overview: SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4165, Rev. B SPM6G060-120D Three-Phase IGBT BRIDGE, With Gate Driver and Optical.
| Part number | SPM6G060-120D |
|---|---|
| Manufacturer | Sensitron |
| File Size | 92.00 KB |
| Description | Three-Phase IGBT BRIDGE |
| Datasheet | SPM6G060-120D_Sensitron.pdf |
|
|
|
: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC O BVCES IC ICM VGE IGES ICES 1200 - - 60 40 100 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current ..
VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 40A, VGE = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 125 C O O 1 10 VCE(SAT) 1.9 2.1 RθJC Tjmax Tjmax -40 -55 2.3 0.6 150 150 o mA mA V C/W o o C C • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://.sensitron.
• E-mail Address - sales@sensitron.
| Part Number | Description |
|---|---|
| SPM6G080-060D | Three-Phase IGBT BRIDGE |
| SPM6G080-120D | Three-Phase IGBT BRIDGE |
| SPM6G120-120D | Three-Phase IGBT BRIDGE |
| SPM6G140-060D | Three-Phase IGBT BRIDGE |
| SPM6G150-060D | Three-Phase IGBT BRIDGE |
| SPM6G250-120D | Three-Phase IGBT BRIDGE |
| SPM6M020-060D | Three-Phase MOSFET BRIDGE |
| SPM6M050-010D | Three-Phase MOSFET BRIDGE |
| SPM6M060-010D | Three-Phase MOSFET BRIDGE |
| SPM6M070-020D | Three-Phase MOSFET BRIDGE |