SPM6G060-120D
SPM6G060-120D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC
BVCES IC ICM VGE IGES ICES
- -
60 40 100 +/-20 +/- 200
V A A V n A
TC = 90 C Pulsed Collector Current, Pulse Width limited by Tj Max Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current
..
VCE = 1200 V, VGE=0V Ti=25o C VCE = 800 V, VGE=0V Ti=125o C Collector to Emitter Saturation Voltage, IC = 40A, VGE = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 125 C
1 10 VCE(SAT) 1.9 2.1 RθJC Tjmax Tjmax -40 -55 2.3 0.6 150 150 o m A m A V
C/W o o
- 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron.
- Page 1 of 6
SPM6G060-120D SENSITRON TECHNICAL DATA Datasheet 4165, Rev. B
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115 o
10m V/o C o
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Pulse Current, Pulse Width limited by Tj Max Diode Forward Voltage, IF = 40A, Tj = 25 C Tj = 125 OC Diode Reverse Recovery Time (IF=40A, VRR=600V , di/dt=800 A/µs) Maximum Thermal Resistance
PIV IF IFp VF
- 1.8 1.8
40 100 2.3
V A A V trr...
