Description
A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC
O
BVCES IC ICM
Features
- 4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features is activated, SD is pulled down. 7- SD can be used to shutdown all IGBTs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output Fe.