SPM6G060-120D Overview
Key Specifications
Operating Voltage: 15 V
Max Voltage (typical range): 20 V
Min Voltage (typical range): 10 V
Description
A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 500 µA, VGE = 0V Continuous Collector Current TC = 25 OC O BVCES IC ICM VGE IGES ICES 1200 - - 60 40 100 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Collector Current, Pulse Width limited by TjMax Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 40A, VGE = 15V, Maximum O O 1 10 VCE(SAT) 1.9 2.1 RθJC Tjmax Tjmax -40 -55 2.3 0.6 150 150 o mA mA V C/W o o C C - 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - Page 1 of 6 SPM6G060-120D SENSITRON TECHNICAL DATA Datasheet 4165, Rev. B Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 90 100 10 20 115 o C 10mV/oC o C ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Pulse Current, Pulse Width limited by TjMax Diode Forward Voltage, IF = 40A, Tj = 25 C Tj = 125 OC Diode Reverse Recovery Time (IF=40A, VRR=600V , di/dt=800 A/µs) Maximum O O PIV IF IFp VF 1200 - 1.8 1.8 40 100 2.3 V A A V trr RθJC - 240 - 1.0 nsec o C/W Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forwar.
