SPM6G080-060D Overview
Description
A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 80 70 A - - 170 +/-20 +/- 100 A V nA Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum O 1 10 VCE(SAT) 1.7 2.0 mA mA V RθJC - - 0.45 o C/W Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O IC - - 40 25 120 A A Brake Resistor SPECIFICATIONS Maximum Continuous power dissipation Impulse Energy Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 Pd 2 80 150 150 watt Joules o C C o - 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - Page 1 of 6. SENSITRON TECHNICAL DATA Data Sheet 4098, Rev.
