SPM6G080-060D Description
A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V .. E-mail Address - sales@sensitron. SENSITRON TECHNICAL DATA Data Sheet 4098,...