SPM6G080-060D
SPM6G080-060D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 600 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1m S Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
..
BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES
- -
- -
80 70
- -
170 +/-20 +/- 100
A V n A
Zero Gate Voltage Collector Current VCE = 600 V, VGE=0V Ti=25o C VCE = 480 V, VGE=0V Ti=125o C Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance TC = 25 C
1 10 VCE(SAT) 1.7 2.0 m A m A V
RθJC
- -
0.45 o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5m S TC = 25 OC TC = 90 C ICM O
- -
40 25 120
Brake Resistor SPECIFICATIONS
Maximum Continuous power dissipation Impulse Energy Maximum operating Junction Temperature Maximum Storage Junction Temperature Tjmax Tjmax -40 -55 Pd 2 80 150 150 watt Joules o
C C o
- 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798
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- http://.sensitron.
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