SPM6G080-120D
SPM6G080-120D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1m S Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
..
BVCES TC = 25 OC TC = 90 C ICM VGE IGES V
GE(TH) O
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80 70
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200 +/-20 +/- 100 6.0
A V n A V
Gate Threshold Voltage, IC=2m A Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25o C VCE = 900 V, VGE=0V Ti=125o C Collector to Emitter Saturation Voltage, IC = 60A, VGE = 15V, Maximum Thermal Resistance TC = 25 OC
ICES
1 10 VCE(SAT) 2.5 2.8 m A m A V
RθJC
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0.3 o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5m S TC = 25 OC TC = 90 C ICM O
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40 25 120
- 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron.
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