SPM6G080-120D datasheet by Sensitron.
| Part number | SPM6G080-120D |
|---|---|
| Datasheet | SPM6G080-120D_Sensitron.pdf |
| File Size | 108.01 KB |
| Manufacturer | Sensitron |
| Description | Three-Phase IGBT BRIDGE |
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A 1200 VOLT, 80 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PER IGBT DEVICE PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V .. E-mail Address - sales@sensitron. E-mail Address - sales@sensitron.
| Part Number | Description |
|---|---|
| SPM6G080-060D | Three-Phase IGBT BRIDGE |
| SPM6G060-120D | Three-Phase IGBT BRIDGE |
| SPM6G120-120D | Three-Phase IGBT BRIDGE |
| SPM6G140-060D | Three-Phase IGBT BRIDGE |
| SPM6G150-060D | Three-Phase IGBT BRIDGE |
| SPM6G250-120D | Three-Phase IGBT BRIDGE |
| SPM6M020-060D | Three-Phase MOSFET BRIDGE |
| SPM6M050-010D | Three-Phase MOSFET BRIDGE |
| SPM6M060-010D | Three-Phase MOSFET BRIDGE |
| SPM6M070-020D | Three-Phase MOSFET BRIDGE |
