Datasheet Details
| Part number | SPM6G120-120D |
|---|---|
| Manufacturer | Sensitron |
| File Size | 284.95 KB |
| Description | Three-Phase IGBT BRIDGE |
| Datasheet | SPM6G120-120D_Sensitron.pdf |
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Overview: SENSITRON SEMICONDUCTOR TECHNICAL DATA SPM6G120-120D Data Sheet 4100 Rev.
| Part number | SPM6G120-120D |
|---|---|
| Manufacturer | Sensitron |
| File Size | 284.95 KB |
| Description | Three-Phase IGBT BRIDGE |
| Datasheet | SPM6G120-120D_Sensitron.pdf |
|
|
|
: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC ..
BVCES TC = 25 OC TC = 80 C ICM ICES O 1200 - - 120 80 180 V A A IC 2 15 TC = 25 OC TC = 125 C O mA mA V Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance VCE(SAT) - 1.9 2.2 30 10 100 10 2.3 Ohm Ohm Ohm usec 20 0.27 V/usec o IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC - - C/W MODULE TOTAL WEIGHT Estimated Total Weight 13 OZ • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://.sensitron.
• E-mail Address - sales@sensitron.
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