SPM6G120-120D
SPM6G120-120D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 2m A, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10m S Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25o C VCE = 800 V, VGE=0V Ti=125o C
..
BVCES TC = 25 OC TC = 80 C ICM ICES
- -
120 80 180
2 15 TC = 25 OC TC = 125 C
O m A m A V
Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance
VCE(SAT)
- 1.9 2.2 30 10 100 10
Ohm Ohm Ohm usec 20 0.27 V/usec o
IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC
- -
C/W
MODULE TOTAL WEIGHT
Estimated Total Weight 13 OZ
- 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron.
- 1
SPM6G120-120D SENSITRON
TECHNICAL DATA
Data Sheet 4100 Rev. Brake IGBT SPECIFICATIONS
Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5m S IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case Thermal Resistance RθJC TC = 25 OC TC = 90 C ICM 10 10 0.35 o O
- -
50 30 100
A A Ohm K Ohm C/W
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