SPM6G120-120D Overview
Key Specifications
Description
A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10mS Zero Gate Voltage Collector Current (For the module) VCE = 1200 V, VGE=0V Ti=25oC VCE = 800 V, VGE=0V Ti=125oC BVCES TC = 25 OC TC = 80 C ICM ICES O 1200 - - 120 80 180 V A A IC 2 15 TC = 25 OC TC = 125 C O mA mA V Collector to Emitter Saturation Voltage, IC = 80A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance VCE(SAT) - 1.9 2.2 30 10 100 10 2.3 Ohm Ohm Ohm usec 20 0.27 V/usec o IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case - - C/W MODULE TOTAL WEIGHT Estimated Total Weight 13 OZ - 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - 1 SPM6G120-120D SENSITRON TECHNICAL DATA Data Sheet 4100 Rev. Brake IGBT SPECIFICATIONS Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5mS IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case o O IC - - 50 30 100 A A Ohm K Ohm C/W ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 80A O PIV IF IFSM VF trr RθJC 1200 - 1.8 250 - 80 200 2.3 300 0.45 V A A V nsec o Diode Reverse Recovery.
