• Part: SPM6G140-060D
  • Description: Three-Phase IGBT BRIDGE
  • Manufacturer: Sensitron
  • Size: 270.04 KB
Download SPM6G140-060D Datasheet PDF
Sensitron
SPM6G140-060D
SPM6G140-060D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION : A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 2m A, VGE = 0V Continuous Collector Current Pulsed Collector Current, 10m S Zero Gate Voltage Collector Current (For the module) VCE = 600 V, VGE=0V Ti=25o C VCE = 480 V, VGE=0V Ti=125o C .. BVCES TC = 25 OC TC = 80 C ICM ICES - - 140 140 200 2 15 TC = 25 OC TC = 125 C O m A m A V Collector to Emitter Saturation Voltage, IC = 90A, VGE = 15V, IGBT Internal Turn On Gate Resistance IGBT Internal Turn Off Gate Resistance VCE(SAT) - 1.5 1.8 8.2 6.2 100 TBD Ohm Ohm Ohm usec 20 0.22 V/usec o IGBT Internal Soft Shutdown Turn Off Gate Resistance Short Circuit Time, Conditions TBD DC Bus Voltage Rate of Rise With 15V Supply Removed, dv/dt Junction To Case Thermal Resistance RθJC - - C/W MODULE TOTAL WEIGHT Estimated Total Weight 13 OZ - 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - http://.sensitron. - E-mail Address - sales@sensitron. - 1 SPM6G140-060D SENSITRON TECHNICAL DATA Data Sheet 4977 Rev. Brake IGBT SPECIFICATIONS Continuous Collector Current (Limited by Terminals) Pulsed Collector Current, 0.5m S IGBT Internal Gate Resistance IGBT Internal Gate Shunt Resistance Junction To Case Thermal Resistance RθJC TC = 25 OC TC = 90 C ICM 10 10 0.28 o O - - 80 80 250 A A Ohm K Ohm C/W ULTRAFAST DIODES RATING AND CHARACTERISTICS...