SPM6G150-060D Overview
Description
A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES O 600 - - V IC - - 150 130 A - - 250 +/-20 +/- 100 A V nA VCE = 600 V, VGE=0V Ti=25oC VCE = 480 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 100A, VGE = 15V, Maximum O 3 20 VCE(SAT) 1.7 2.0 mA mA V 0.25 o C/W Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS Maximum IC - - 80 60 120 0.45 o A A C/W Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120 o C C o 10mV/oC - 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - SPM6G150-060D SENSITRON TECHNICAL DATA DATASHEET 4113, REV A PARAMETER SYMBOL MI N TYP MAX UNIT ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 100A O PIV IF IFSM VF trr RθJC 600 - 1.4 90 130 500 1.7 160 V A A V nsec o Diode Reverse Recovery Time (IF=100A, VRR=300V , di/dt=200 A/µs) Maximum - - 0.4 C/W Gate Driver Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Rev.
