SPM6G150-060D
SPM6G150-060D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1m S Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V Zero Gate Voltage Collector Current
..
BVCES TC = 25 OC TC = 90 C ICM VGE IGES ICES
- -
- -
150 130
- -
250 +/-20 +/- 100
A V n A
VCE = 600 V, VGE=0V Ti=25o C VCE = 480 V, VGE=0V Ti=125o C Collector to Emitter Saturation Voltage, IC = 100A, VGE = 15V, Maximum Thermal Resistance RθJC TC = 25 C
3 20 VCE(SAT) 1.7 2.0 m A m A V
0.25 o
C/W
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5m S Maximum Thermal Resistance TC = 25 OC TC = 90 C ICM RθJC O
- -
80 60 120 0.45 o
A C/W
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tco Tsd 100 110 20 10 120 o
C C o
10m V/o C
- 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron....
