SPM6G250-120D
SPM6G250-120D is Three-Phase IGBT BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1m S Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V
..
BVCES TC = 25 OC TC = 90 C ICM VGE IGES V
GE(TH) O
- -
- -
250 240
- -
600 +/-20 +/- 300 6.0
A V n A V
Gate Threshold Voltage, IC=2m A Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25o C VCE = 900 V, VGE=0V Ti=125o C Collector to Emitter Saturation Voltage, IC = 200A, VGE = 15V, Maximum Thermal Resistance Brake IGBT 60A Maximum Current TC = 25 C
ICES
5 40 VCE(SAT) 2.5 2.8 m A m A V
RθJC
- -
0.10 0.20 o
C/W C/W o
Brake IGBT SPECIFICATIONS
Continuous Collector Current Pulsed Collector Current, 0.5m S TC = 25 OC TC = 90 C ICM O
- -
150 120 300
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tso Tsd 100 110 20 10 120 o
C C o
10m V/o C
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