SPM6G250-120D Overview
Description
A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MI N TYP MAX UNIT PARAMETER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 250 µA, VGE = 0V Continuous Collector Current Pulsed Collector Current, 1mS Gate to Emitter Voltage Gate-Emitter Leakage Current , VGE = +/-20V BVCES TC = 25 OC TC = 90 C ICM VGE IGES V GE(TH) O 1200 - - V IC - - 250 240 A 3.0 - - 600 +/-20 +/- 300 6.0 A V nA V Gate Threshold Voltage, IC=2mA Zero Gate Voltage Collector Current VCE = 1200 V, VGE=0V Ti=25oC VCE = 900 V, VGE=0V Ti=125oC Collector to Emitter Saturation Voltage, IC = 200A, VGE = 15V, Maximum O ICES 5 40 VCE(SAT) 2.5 2.8 mA mA V RθJC - - 0.10 0.20 o C/W C/W o Brake IGBT SPECIFICATIONS Continuous Collector Current Pulsed Collector Current, 0.5mS TC = 25 OC TC = 90 C ICM O IC - - 150 120 300 A A Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Shutdown Hysteresis Over-Temperature Output Tso Tsd 100 110 20 10 120 o C C o 10mV/oC - 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - - E-mail Address - sales@ - SPM6G250-120D SENSITRON TECHNICAL DATA DATASHEET 4109, REV ENG- ULTRAFAST DIODES RATING AND CHARACTERISTICS Diode Peak Inverse Voltage Continuous Forward Current, TC = 90 C Forward Surge Current, tp = 10 msec Diode Forward Voltage, IF = 200A O PIV IF IFSM VF trr RθJC 1200 - 2.0 180 240 700 2.3 250 V A A V nsec o Diode Reverse Recovery Time (IF=200A, VRR=600V , di/dt=200 A/µs) Maximum - - 0.15 C/W Gate Driver Supply Voltage Input On Current Opto-Isolator.
