SPM6M020-060D Datasheet | Sensitron

SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. - SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1m S Gate to Source Voltage .. BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V GS(TH) ICSS O - 20 10 40 V A A V n A V - - +/-20 +/- 100 Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1m A Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25o C VCS= 480 V, VGE=0V Ti=125o C On-State Resistance, TC = 25 C TC = 150 C ID = 10A, VCC = 15V, Input Capacitance Output Capacitance Reverse Transfer Cap. VCS = 25 V, VGE = 0 V, f = 1 MHz - 4.0 250 500 RDSon 0.19 0.43 Ciss Coss Cres 2400 780 50 0.20 µA µA V p F Over-Temperature Shutdown Over-Temperature Shutdown Over-Temperature Output Temperature Sensor Output DC Offset Accuracy, at temperature range from 0 C to 125 C Over-Temperature Shutdown Hysteresis o o Tsd Tso 107 10 +0.0 +/-1.0 20 115 o C m V/o C m V +/-2.0 o o - 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 - - World Wide Web Site - http://.sensitron. - E-mail Address - sales@sensitron. - Page 1 of 13 SENSITRON TECHNICAL DATA Datasheet 4982, Rev. - Gate Driver , - 40OC <TC< 125OC Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5m A Under Voltage Lockout ITRIP Reference Voltage (1) Input-to-Output Turn On Delay Output Turn On Rise Time Input-to-Output Turn Off Delay Output Turn Off Fall Time At (VDD=200V, RD=20Ω, ID=10A), Tj = 25 to 125 OC Input-Output Isolation Voltage 1500 VCC HIN, LIN Ith BVin VF VCCUV Itrip-ref tond tr toffd tf 10 2 5.0 11.5 1.60 550 20 1.6 1.5 1.65 500 20...