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SPM6M020-060D - Three-Phase MOSFET BRIDGE

Description

Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function Isolated Input for High-side IGBT of Phase A Return for Input at 1 NC Isolated Input for Low-side IGBT of Phase A Return for Input at 4 NC Isolated Input for High-side IGBT of Phase B Return for Input at 7 NC Isolated Input for Low-side I

Features

  • delay time is about 50 usec. Idco ( Pin 26 ), is an absolute value current sense output of DC bus current. The sensor gain is 0.05V/A. The internal impedance of this output is 1KΩ, and internal filter capacitance.

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Datasheet Details

Part number SPM6M020-060D
Manufacturer Sensitron
File Size 205.74 KB
Description Three-Phase MOSFET BRIDGE
Datasheet download datasheet SPM6M020-060D Datasheet

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Full PDF Text Transcription

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SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. – SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage www.DataSheet4U.
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