SPM6M020-060D Description
SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage .. E-mail Address -...