SPM6M060-010D
SPM6M060-010D is Three-Phase MOSFET BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED)
PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1m S
..
SYMBOL
MA X
UNIT
BVCSS TC = 25 OC TC = 90 C IDM VGS IGSS V
GS(TH) O
- V
- -
60 50 100
A V n A V
Gate to Source Voltage Gate-Source Leakage Current , VGS = +/-20V Gate Threshold Voltage, IC=1m A Zero Gate Voltage Drain Current VCS = 600 V, VGE=0V Ti=25o C VCS= 480 V, VGE=0V Ti=125o C On-State Resistance, ID = 10A, VGS = 15V, Input Capacitance Output Capacitance Reverse Transfer Cap. VCS = 25 V, VGE = 0 V, f = 1 MHz Maximum Thermal Resistance TC = 25 C
- -
+/-20 +/- 100
- 4
ICSS
250 500 RDSon Ciss Coss Cres RθJC 0.012 3950 850 250 0.7 o
µA µA V p F
C/W
- 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX 631 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron.
- SPM6M060-010D
SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A
Gate Driver PARAMETER Supply Voltage Input On Current Opto-Isolator Logic High Input Threshold Input Reverse Breakdown Voltage Input Forward Voltage @ Iin = 5m A Under Voltage Lockout ITRIP Threshold Voltage Turn On Delay Turn On Rise Time Turn Off Delay Turn Off Fall Time Input-Output Isolation Voltage
(1)
SYMBOL VCC HIN, LIN Ith BVin VF VCCUV ITRIPth tond tr toffd...
