SPM6M080-010D
SPM6M080-010D is Three-Phase MOSFET BRIDGE manufactured by Sensitron.
DESCRIPTION
: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC
BVDSS ID IDM VGS IGSS ICSS
- -
80 70 200 +/-20 +/- 200
V A A V n A
TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V
..
Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25o C VDS= 80 V, VGS=0V Ti=125o C Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Maximum operating Junction Temperature Maximum Storage Junction Temperature Tj = 25 C Tj = 150 C
1 3 RDSon 0.009 0.018 RθJC Tjmax Tjmax -40 -55 0.012 0.65 150 150 o m A m A V
C/W o o
- 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798
- - World Wide Web Site
- http://.sensitron.
- E-mail Address
- sales@sensitron.
- Page 1 of 7
SPM6M080-010D SENSITRON TECHNICAL DATA Datasheet 4118, Rev. C
Over-Temperature Shutdown
Over-Temperature Shutdown Over-Temperature Output Over-Temperature Shutdown Hysteresis Tsd Tso 105 110 10 20 115 o
10m V/o C o
DIODES CHARACTERISTICS
Continuous Source Current, TC = 90 OC Diode Forward Voltage, IS = 60A, Tj = 25 C
IS VSD trr
- -
70 1.15
A V nsec
Diode Reverse Recovery Time (IS=50A, VDD=50V , di/dt=100...
