SPM6M080-010D - Three-Phase MOSFET BRIDGE

Product Overview

Sensitron

Datasheet Details

Part number	SPM6M080-010D
Manufacturer	Sensitron
File Size	95.56 KB
Description	Three-Phase MOSFET BRIDGE
Datasheet	SPM6M080-010D Datasheet
Additional preview pages of the SPM6M080-010D datasheet.

Product details

Description

A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC O BVDSS ID IDM VGS IGSS ICSS 100 - - 80 70 200 +/-20 +/- 200 V A A V nA TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V www.DataSheet

Features

4- Under-voltage shutdown is automatically reset once the VCC rises above the 12.1V threshold limit. 5- Desaturation shutdown is a latching feature and internally reset. 6- When any of the internal protection features are activated, SD is pulled down. 7- SD can be used to shutdown all MOSFETs by an external command. An open collector switch shall be used to pull down SD externally. 8- Also, SD can be used as a fault condition output. Low output at SD indicates a fault situation. b- Fault Output.

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Published: May 11, 2007 |