LH52D1000 Overview
The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology. The maximum applicable voltage on any pin with respect to GND.
LH52D1000 Key Features
- Access time: 85 ns (MAX.), 100 ns (MAX.)
- Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 µs) Standby: 45 µA (MAX.)
- Data Retention: 1.0 µA (MAX. VCCDR = 3 V, tA = 25 °C)
- Single power supply: 2.7 V to 3.6 V
- Operating temperature: -40°C to +85°C
- Fully-static operation
- Three-state output
- Not designed or rated as radiation hardened
- N-type bulk silicon DESCRIPTION
- A16 CE1 CE2 WE OE