LH52D1000 Datasheet | Sharp Corporation

Features - Access time: 85 ns (MAX.), 100 ns (MAX.) - Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 µs) Standby: 45 µA (MAX.) - Data Retention: 1.0 µA (MAX. VCCDR = 3 V, tA = 25 °C) - Single power supply: 2.7 V to 3.6 V - Operating temperature: -40°C to +85°C - Fully-static operation - Three-state output - Not designed or rated as radiation hardened - Packages: 32-pin 8 × 20 mm2 TSOP 32-pin 8 × 13.4 mm2 STSOP - N-type bulk silicon DESCRIPTION The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology. A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5...