Datasheet Summary
Data Sheet
Features
- Flash Memory and SRAM
- Stacked Die Chip Scale Package
- 72-ball 8 mm × 11 mm CSP plastic package
- Power supply: 2.7 V to 3.6 V
- Operating temperature: -25°C to +85°C
- Flash Memory
- Access time (MAX.): 90 ns
- Operating current (MAX.) (The current for F-VCC pin and F-VCCW pin):
- Read: 25 mA (tCYCLE = 200 ns)
- Word write: 57 mA
- Block erase: 42 mA
- Standby current (the current for F-VCC pin): 15 µA (MAX. F-RP ≤ GND ± 0.2 V)
- Optimized array blocking architecture
- Two 4K-word boot blocks
- Six 4K-word parameter blocks
Stacked Chip 16M Flash Memory and 4M SRAM
- Thirty-one 32K-word main blocks
- Bottom boot location
- Extended cycling capability
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