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LRS1338A - Stacked Chip 8M Flash Memory and 2M SRAM

Description

The LRS1338A is a combination memory organized as 524,288 × 16-bit flash memory and 262,144 × 8-bit static RAM in one package.

It is fabricated using silicongate CMOS process technology.

Figure 1.

Features

  • Flash memory and SRAM.
  • Stacked die chip scale package.
  • 48-pin TSOP (TSOP48-P-1014) plastic package.
  • Power supply: 2.7 V to 3.6 V.
  • Operating temperature: -40°C to +85°C.
  • Access time (MAX. ):.
  • Flash memory: 120 ns.
  • SRAM: 85 ns.
  • Operating current (MAX. ):.
  • Flash memory.
  • Read: 25 mA (tCYCLE = 200 ns).
  • Word write: 57 mA (F-VCC ≥ 3.0 V).
  • Block erase: 42 mA (F-VCC ≥ 3.0 V).
  • SRAM:.

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Datasheet preview – LRS1338A

Datasheet Details

Part number LRS1338A
Manufacturer Sharp Corporation
File Size 218.04 KB
Description Stacked Chip 8M Flash Memory and 2M SRAM
Datasheet download datasheet LRS1338A Datasheet
Additional preview pages of the LRS1338A datasheet.

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Full PDF Text Transcription

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LRS1338A Data Sheet FEATURES • Flash memory and SRAM • Stacked die chip scale package • 48-pin TSOP (TSOP48-P-1014) plastic package • Power supply: 2.7 V to 3.6 V • Operating temperature: -40°C to +85°C • Access time (MAX.): – Flash memory: 120 ns – SRAM: 85 ns • Operating current (MAX.): – Flash memory – Read: 25 mA (tCYCLE = 200 ns) – Word write: 57 mA (F-VCC ≥ 3.0 V) – Block erase: 42 mA (F-VCC ≥ 3.0 V) – SRAM: 25 mA (tCYCLE = 200 ns) • Standby current2 – Flash memory: 20 µA MAX. (F-CE ≥ F-VCC - 0.2 V, F-RP ≤ 0.2 V, F-VPP ≤ 0.2 V) – SRAM: – 40 µA MAX. (S-CE ≥ S-VCC - 0.2 V) – 0.6 µA TYP. (TA = 25°C, S-VCC = 3 V, S-CE ≥ S-VCC - 0.2 V) • Fully static operation • Three-state output NOTES: 1. Block erase and word write operations of flash memory with TA < -30°C are not supported. 2.
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